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SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120m@ 10 V < VGS = RDS(on) < 136m@VGS = 4.5V FEATURE High power and current handing capability Lead free ... Read More

SOT-23 Plastic-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) Read More

SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) Read More

QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the ... Read More

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m RDS(ON) (at VGS = 4.5V) < 30m RDS(ON) (at VGS = 2.5V) < 48m General Description The HXY4404 uses advanced ... Read More

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5m RDS(ON) (at VGS = 4.5V) < 15.5m General Description The HXY4406A uses advanced trench technology toprovide ... Read More

SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 m@ 4.5V 5.0 A < VGS = z RDS(on) < m@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 m@VGS = 1.8V APPLICATION z DC/DC Converters z Load ... Read More

18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device ... Read More

HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low ... Read More

SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on) Read More