high frequency transistor online manufacture

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE High Breakdown Voltage MARKING A94=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ... Read More

TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN) FEATURE Excellent hFE linearity Low noise Complementary to A733 MARKING C945=Device code Solid dot=Green molding compound device, if none,the normal ... Read More

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE High DC Current Gain and Large Current Capability MARKING M28S=Device code Solid dot=Green molding compound device, if none,the normal device Z... Read More

TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ORDERING INFORMATION ... Read More

TO-251-3L Plastic-Encapsulate Transistors B772M TRANSISTOR (PNP) FEATURES Low Speed Switching MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO ... Read More

TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO ... Read More

TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE power switching applications MARKING 13003B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code ... Read More

TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN) FEATURE Power Switching Applications Good high temperature Low saturation voltage High speed switching MARKING JCET Logo 13005HD55=Device ... Read More

TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ... Read More

HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high ... Read More