n channel mosfet transistor online manufacture

8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < @VGS = 4.5V 25 mz 20z RDS(on) < @VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ... Read More

13P10D -100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a ... Read More

Original P Channel Transistor / High Voltage Transistor 50P06D TO-252 P Channel Transistor DESCRIPTION The 50P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device ... Read More

G420ND06LR1S Mosfet Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 m(typ.)@V GS = 10V R DS(ON) = 48 m(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen ... Read More

OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate ... Read More

6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as ... Read More

30P06D TO-252 High Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device ... Read More

TO-220-3L Pack Logic Level Transistor / High Voltage Transistor 100V Logic Level Transistor applications Switch, buck and synchronous rectification Uninterruptible Power Supplies (UPS) Small motor control ... Read More

AP12N10D Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ... Read More

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS ... Read More