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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A
6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Large Image :  6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 6G03S
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

Description
Product Name: Mosfet Power Transistor RDS(ON): < 37mΩ
Model Number: 6G03S ID: 6.5A
FEATURE: Low Gate Charge VGS: -10V
High Light:

n channel mosfet transistor

,

high current mosfet switch

6G03S 30V N+P-Channel Enhancement Mode MOSFET

 

 

Description

The 6G03S uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

 

General Features

N-channel P-channel

N-Channel

VDS = 30V,ID =6.5A

RDS(ON) < 16mΩ@ VGS=10V

P-Channel

VDS = -30V,ID = -7A

RDS(ON) < 37mΩ @ VGS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

 

 

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

 

 

Package Marking and Ordering Information

6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 0

 

Absolute Maximum Ratings (TC=25℃unless otherwise noted)
6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 1
 
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 2

 

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
 
 
30V N+P-Channel EnhancemeN- Channel Typical Electrical and Thermal Characteristics (Curves)
 
6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 36G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 46G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 56G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 66G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 76G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 86G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 9
6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 106G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A 11

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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