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8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

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8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

Large Image :  8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 8205A
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

Description
Product Name: Mosfet Power Transistor VDSS: 6.0 A
Model Number: 8205A APPLICATION: Power Management
FEATURE: Low Gate Charge Power Mosfet Transistor: SOT-23-6L Plastic-Encapsulate
High Light:

n channel mosfet transistor

,

high current mosfet switch

8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET

 

 

General Description

 

 

VDSS= V ID= 6.0 A

z 20

G1

6

D1,D2

5

G2

4

  z  

RDS(on) < Ω@V = 4.5V

25m

GS

  z  

RDS(on) < Ω@V = 2.5V

32m

GS

1 2 3

S1

D1,D2 S2

 

 

 

 

FEATURE

 

z TrenchFET Power MOSFET

z Excellent RDS(on)

z Low Gate Charge

z High Power and Current Handing Capability

z Surface Mount Package

 

 

APPLICATION

 

z Battery Protection

z Load Switch

z Power Management

 

 

Parameter Symbol Test Condition Min Typ Max Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V
Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V

 

 

DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance Ciss 800 pF
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF
Reverse Transfer Capacitance Crss 125 pF

 

 

SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time td(on) 18 ns
Turn-on rise time tr VDD=10V,VGS=4V, 5 ns
Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns
Turn-off fall time tf 20 ns
Total Gate Charge Qg 11 nC
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC
Gate-Drain Charge Qgd 2.5 nC

 

 

Notes :

1. Repetitive rating:Pluse width limited by maximum junction temperature

2. Surface Mounted on FR4 board,t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

 

 

 

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS 0

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS 18205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS 2

 

 

SOT-23-6L Package Outline Dimensions

 

 

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS 3

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS 4

 

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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