|Product Name:||Dual Mosfet Switch||Model:||AP50N10D|
|Pack:||TO-252||Marking:||AP50N10D XXX YYYY|
|VDSDrain-Source Voltage:||100V||VGSGate-Sou Rce Voltage:||±20V|
n channel mosfet transistor,
high voltage transistor
AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor
Dual Mosfet Switch applications
Switch Mode Power Supplies (SMPS)
Residential, commercial, architectural and street lighting
Dual Mosfet Switch Description:
The AP50N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a
Battery protection or in other Switching application.
Dual Mosfet Switch Features
VDS = 100V ID =50A
RDS(ON) < 25mΩ@ VGS=10V
Package Marking and Ordering Information
|AP50N10D||TO-252||AP50N10D XXX YYYY||2500|
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
|I (100℃)||Drain Current-Continuous(TC=100℃)||21||A|
|IDM||Pulsed Drain Current||70||A|
|PD||Maximum Power Dissipation||85||W|
|EAS||Single pulse avalanche energy (Note 5)||256||mJ|
|TJ,TSTG||Operating Junction and Storage Temperature Range||-55 To 175||℃|
|RθJC||Thermal Resistance, Junction-to-Case (Note 2)||1.8||℃/W|
Electrical Characteristics (TC=25℃unless otherwise noted)
|BVDSS||Drain-Source Breakdown Voltage||VGS=0V ID=250μA||100||-||V|
|IDSS||Zero Gate Voltage Drain Current||VDS=100V,VGS=0V||-||-||1||μA|
|IGSS||Gate-Body Leakage Current||VGS=±20V,VDS=0V||-||-||±100||nA|
|VGS(th)||Gate Threshold Voltage||VDS=VGS,ID=250 μA||1||3||V|
|Crss||Reverse Transfer Capacitance||-||250||-||PF|
|td(on)||Turn-on Delay Time||VDD=50V,RL=5Ω
|Turn-on Rise Time||-||7||-||nS|
|td(off)||Turn-Off Delay Time||-||29||-||nS|
|Turn-Off Fall Time||-||7||-||nS|
|Qg||Total Gate Charge||VDS=50V,ID=10A,
|VSD||Diode Forward Voltage (Note 3)||VGS=0V,IS=20A||-||-||1.2||V|
|Diode Forward Current (Note 2)||-||-||-||30||A|
|Reverse Recovery Time||
TJ = 25°C, IF = 10A
di/dt = 100A/μs(Note3)
|Qrr||Reverse Recovery Charge||-||53||-||nC|
|ton||Forward Turn-On Time||
Intrinsic turn-on time is negligible (turn-on is dominated by
1,Repetitive Rating: Pulse width limited by maximum junction temperature.
2,Surface Mounted on FR4 Board, t ≤ 10 sec.
3,Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4,Guaranteed by design, not subject to production
5,EAS Condition : Tj=25 ℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω, IAS=32A
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