|Product Name:||Mosfet Power Transistor||V DSS Drain-Source Voltage:||-60 V|
|V GSS Gate-Source Voltage:||±20 V||T J Maximum Junction Temperature:||175°C|
|T STG Storage Temperature Range:||-55 To 175 °C||I S Source Current-Continuous(Body Diode):||-55A|
logic mosfet switch,
mosfet driver using transistor
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor
Mosfet Power Transistor Introduction
MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained.
There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities.
Many power MOSFETs incorporate a vertical structure topology. This enables high current switching with high efficiency within a relatively small die area. It also enables the device to support high current and voltage switching.
Mosfet Power Transistor Feature
R DS(ON) = 12.5mΩ (typ.)@ V GS = -10V
R DS(ON) = 18mΩ (typ.) @ V GS = -4.5V
Reliable and Rugged
Halogen Free and Green DevicesAvailable
Mosfet Power Transistor Applications
Power Management in DC/DC converter.
Ordering and Marking Information
D U V
G120P06L G120P06L G120P06L
XYWXXXXXX XYWXXXXXX XYWXXXXXX
D: TO-252-2L U: TO-251-3L
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
Absolute Maximum Ratings
Contact Person: David