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FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

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FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Large Image :  FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: FMMT491
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Description
Type: Silicon Power Transistor FEATURE: Low Equivalent On-resistance
Collector-Emitter Voltage: 60v Storage Temperature: -55~+150℃
Collector Power Dissipation: 250mW Peak Pulse Current: 2A
High Light:

high frequency transistor

,

power mosfet transistors

SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN)
 
 

FEATURE
 

Low equivalent on-resistance

 

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 0

Marking :491

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage80V
VCEOCollector-Emitter Voltage60V
VEBOEmitter-Base Voltage5V
ICCollector Current1A
ICMPeak Pulse Current2A
PCCollector Power Dissipation250mW
RΘJAThermal Resistance From Junction To Ambient500℃/W
TjJunction Temperature150
TstgStorage Temperature-55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100μA,IE=080  V
Collector-emitter breakdown voltageV(BR)CEO1IC=10mA,IB=060  V
Emitter-base breakdown voltageV(BR)EBOIE=100μA,IC=05  V
Collector cut-off currentICBOVCB=60V,IE=0  0.1μA
Emitter cut-off currentIEBOVEB=4V,IC=0  0.1μA

 
 
 

DC current gain

hFE(1)VCE=5V,IC=1mA100   
 hFE(2) 1VCE=5V,IC=500mA100 300 
 hFE(3) 1VCE=5V,IC=1A80   
 hFE(4) 1VCE=5V,IC=2A30   

 

Collector-emitter saturation voltage

VCE(sat)1 1IC=500mA,IB=50mA  0.25V
 VCE(sat)2 1IC=1A,IB=100mA  0.5V
Base-emitter saturation voltageVBE(sat) 1IC=1A,IB=100mA  1.1V
Base-emitter voltage

1

VBE

VCE=5V,IC=1A  1V
Transition frequencyfTVCE=10V,IC=50mA,,f=100MHz150  MHz
Collector output capacitanceCobVCB=10V,f=1MHz  10pF

 
 
 

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
 
 
 
Typical Characterisitics  
 
 
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 1
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 2
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 3
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 4
 
 
 
 
 
 
 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.2001.4000.0470.055
E12.2502.5500.0890.100
e0.950 TYP0.037 TYP
e11.8002.0000.0710.079
L0.550 REF0.022 REF
L10.3000.5000.0120.020
θ

 
 
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 5
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 6
FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance 7
 
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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