Home ProductsMosfet Power Transistor

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
Customer Reviews
we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) &lt; 30m
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) &lt; 30m

Large Image :  HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: HXY4606
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Description
Features: Surface Mount Package Product Name: Mosfet Power Transistor
VDS: 30V RDS(ON): < 30m
VDS Model Number: HXY4606 Case: Tape/Tray/Reel
High Light:

n channel mosfet transistor

,

high current mosfet switch

HXY4606 30V Complementary MOSFET

 

 

Description

 

The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.

 

 

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 0

 

 

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

 

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 1

 

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

 

 

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
 
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 2HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 3HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 4HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 5HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 6HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 7HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 8HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 9
 
 
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
 
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 10
 
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
 
 
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
 
 
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
 
 
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 11HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 12HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 13HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 14HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 15HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 16
 
 
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

Send your inquiry directly to us (0 / 3000)

Leave a Message

We will call you back soon!