Home ProductsMosfet Power Transistor

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
Customer Reviews
we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A
HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Large Image :  HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: HXY4812
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Description
Product Name: Mosfet Power Transistor VDS: 30v
Model Number: HXY4812 Case: Tape/Tray/Reel
VGS: ±20v Continuous Drain Current: 6.5A
High Light:

high current mosfet switch

,

high voltage transistor

HXY4812  30V Dual N-Channel MOSFET

 

 

General Description

 

The HXY4822A uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

 

 

Product Summary

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A 0HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A 1

 

 

 

Absolute Maximum Ratings T =25°C unless otherwise noted

 

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A 2

 

 

Electrical Characteristics (T =25°C unless otherwise noted)

 

 

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A 3

 

 

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

 

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A 4HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A 5

 

 

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

Send your inquiry directly to us (0 / 3000)

Leave a Message

We will call you back soon!