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TIP112 Field Effect Transistor , High Frequency Transistor

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TIP112 Field Effect Transistor , High Frequency Transistor

TIP112 Field Effect Transistor , High Frequency Transistor
TIP112 Field Effect Transistor , High Frequency Transistor

Large Image :  TIP112 Field Effect Transistor , High Frequency Transistor

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: TIP112
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

TIP112 Field Effect Transistor , High Frequency Transistor

Description
Product ID: TIP112 Feature: Low Collector Emitter Saturation Voltage
Collector Power Dissipation: 2w Junction Temperature: 150℃
Collector-Base Voltage: 100v Emitter-Base Voltage: 5v
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TO-220-3L Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR (NPN)

 

 

FEATURE
  • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use
 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150

 

 

 

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

 

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10mA,IE=0 100     V
Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0(SUS) 100     V
Emitter-base breakdown voltage V(BR)EBO IE=10mA,IC=0 5     V
Collector cut-off current ICEO VCE=50V,IB=0     2 mA
Collector cut-off current ICBO VCB=100V,IE=0     1 mA
Emitter cut-off current IEBO VEB=5V,IC=0     2 mA

 

DC current gain

hFE(1) VCE=4V,IC=1A 1000   12000  
hFE(2) VCE=4V,IC=2A 500      
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=8mA     2.5 V
Base-emitter voltage VBE VCE=4V,IC=2A     2.8 V
Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz     100 pF

 

 

 

TO-220-3L Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

 

 

TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)

 

 


 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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