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TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

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TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors
TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Large Image :  TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: TIP127
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Description
Type: Semiconductor Triode Power Mosfet Transistor: TO-126 Plastic Encapsulated
Product ID: TIP122 TIP127 Feature: High DC Current Gain
Collector Power Dissipation: 1.25w Junction Temperature: 150℃
High Light:

electronic components triode

,

semiconductor switch

TO-126 Plastic-Encapsulate Transistors

 

 

 

TIP122 Darlington Transistor (NPN)

TIP127 Darlington Transistor (PNP)

 

 

FEATURE
 
Medium Power Complementary Silicon Transistors
 
 
TO-126
 

1. EMITTER

 

 2. COLLECTOR

 

3. BASE

 

 

 

MARKING

 

 

TIP122 , TIP127=Device code

 

Solid dot = Green molding compound device, if none, the normal device XX=Code

 

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 0

 

 

 

Equivalent Circuit

 

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 1

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
TIP122 TO-126 Bulk 200pcs/Bag
TIP127 TO-126 Bulk 200pcs/Bag
TIP122-TU TO-126 Tube 60pcs/Tube
TIP127-TU TO-126 Tube 60pcs/Tube

 

 

MAXIMUM RATINGS (Ta=25unless otherwise noted)

Symbol Parameter TIP122 TIP127 Unit
VCBO Collector-Base Voltage 100 -100 V
VCEO Collector-Emitter Voltage 100 -100 V
VEBO Emitter-Base Voltage 5 -5 V
IC Collector Current -Continuous 5 -5 A
PC * Collector Power Dissipation 1.25 W
RθJA Thermal Resistance Junction to Ambient 100 ℃/W
RθJc Thermal Resistance Junction to Case 8.33 ℃/W
TJ Junction Temperature 150
Tstg Storage Temperature -55~+150

 

 


ELECTRICAL CHARACTERISTICS

 

Ta=25 Š unless otherwise specified

 

TIP122 NPN
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100   V
Collector-emitter breakdown voltage VCEO(SUS) IC=30mA,IB=0 100   V
Collector cut-off current ICBO VCB=100V, IE=0   0.2 mA
Collector cut-off current ICEO VCE=50 V, IB=0   0.5 mA
Emitter cut-off current IEBO VEB=5 V, IC=0   2 mA

 

DC current gain

hFE(1) VCE= 3V, IC=0.5A 1000    
hFE(2) VCE= 3V, IC=3 A 1000 12000  

 

Collector-emitter saturation voltage

 

VCE(sat)

IC=3A,IB=12mA   2

 

V

IC=5 A,IB=20mA   4
Base-emitter voltage VBE VCE=3V, IC=3 A   2.5 V
Output Capacitance Cob VCB=10V, IE=0,f=0.1MHz   200 pF

 

 

TIP127 PNP
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100   V
Collector-emitter breakdown voltage VCEO(SUS) IC=-30mA,IB=0 -100   V
Collector cut-off current ICBO VCB=-100V, IE=0   -0.2 mA
Collector cut-off current ICEO VCE=-50 V, IB=0   -0.5 mA
Emitter cut-off current IEBO VEB=-5 V, IC=0   -2 mA

 

DC current gain

hFE(1) VCE=-3V, IC=-0.5A 1000    
hFE(2) VCE=-3V, IC=-3A 1000 12000  

 

Collector-emitter saturation voltage

 

VCE(sat)

IC=-3A,IB=-12mA   -2

 

V

IC=-5 A,IB=-20mA   -4
Base-emitter voltage VBE VCE=-3V, IC=-3 A   -2.5 V
Output Capacitance Cob VCB=-10V, IE=0,f=0.1MHz   300 pF

* This test is performed with no heat sink at Ta=25℃.

 

 

Typical CharacteristicsTIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 2

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 3

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 4

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 5

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 6

 

 

 

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 7

 


TO-126 Package Outline Dimensions

 

 

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

 

TIP122 TIP127  Semiconductor Triode TO-126 Plastic Encapsulated Transistors 8

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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