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TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

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TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance
TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

Large Image :  TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: TIP110
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

Description
Feature: Industrial Use Product ID: TIP110
Emitter-Base Voltage: 5V Collector Current -Continuous: 2A
High Light:

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TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN)

 

 

 

FEATURE
 
  • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use

 

AXIMUM RATINGS (Ta=25unless otherwise noted)
 
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150

 

 

 

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10mA,IE=0 60     V
Collector-emitter sustaining voltage VCEO(sus) IC=30mA,IB=0 60     V
Emitter-base breakdown voltage V(BR)EBO IE=10mA,IC=0 5     V
Collector cut-off current ICEO VCE=30V,IB=0     2 mA
Collector cut-off current ICBO VCB=60V,IE=0     1 mA
Emitter cut-off current IEBO VEB=5V,IC=0     2 mA

 

DC current gain

hFE(1) VCE=4V,IC=1A 1000      
hFE(2) VCE=4V,IC=2A 500      
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=8mA     2.5 V
Base-emitter voltage VBE VCE=4V,IC=2A     2.8 V
Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz     100 pF

 

 

 

 

TO-220-3L Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

 

 

TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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