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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Large Image :  FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: FMMT591
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Description
VCBO Collector-Base Voltage: -80 V Product Name: Semiconductor Triode
High Light:

high frequency transistor

,

power mosfet transistors

SOT-23 Plastic-Encapsulate Transistors FMMT591 TRANSISTOR (PNP)
 

FEATURE
 

Low equivalent on-resistance

 

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 0

Marking :591

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-80V
VCEOCollector-Emitter Voltage-60V
VEBOEmitter-Base Voltage-5V
ICCollector Current-1A
ICMPeak Pulse Current-2A
PCCollector Power Dissipation250mW
RΘJAThermal Resistance From Junction To Ambient500℃/W
TjJunction Temperature150
TstgStorage Temperature-55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100μA, IE=0-80  V
Collector-emitter breakdown voltageV(BR)CEO1IC=-10mA, IB=0-60  V
Emitter-base breakdown voltageV(BR)EBOIE=-100μA, IC=0-5  V
Collector cut-off currentICBOVCB=-60V, IE=0  -0.1μA
Emitter cut-off currentIEBOVEB=-4V, IC=0  -0.1μA

 
 
 

DC current gain

hFE(1)VCE=-5V, IC=-1mA100   
 hFE(2) 1VCE=-5V, IC=-500mA100 300 
 hFE(3) 1VCE=-5V, IC=-1A80   
 hFE(4) 1VCE=-5V, IC=-2A15   

 

Collector-emitter saturation voltage

VCE(sat)1 1IC=-500mA, IB=-50mA  -0.3V
 VCE(sat)2 1IC=-1A, IB=-100mA  -0.6V
Base-emitter saturation voltageVBE(sat) 1IC=-1A, IB=-100mA  -1.2V
Base-emitter voltage

1

VBE

VCE=-5V, IC=-1A  -1V
Transition frequencyfTVCE=-10V,IC=-50mA,,f=100MHz150  MHz
Collector output capacitanceCobVCB=-10V,f=1MHz  10pF

 
 
 

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
 
 
 
Typical Characterisitics 
 
 FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 1

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 2

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 3FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 4


 
 
 
 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.2001.4000.0470.055
E12.2502.5500.0890.100
e0.950 TYP0.037 TYP
e11.8002.0000.0710.079
L0.550 REF0.022 REF
L10.3000.5000.0120.020
θ

 
 
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 5
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 6
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors 7
 
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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