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SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

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SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

Large Image :  SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: MMBTA44
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

Description
Junction Temperature: 150 ℃ Type: Triode Transistor
Application: Mobile Power Supply/ Led Driver/motor Control Material: Silicon
Collector Current: 600 MA Storage Temperature: -55~+150℃
High Light:

power switch transistor

,

power mosfet transistors

SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN)
 

FEATURE
 

 Switching Transistor

Marking :2X

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 600 mA
PC Collector Power Dissipation 300 mW
RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60     V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40     V
Emitter-base breakdown voltage V(BR)EBO IE=100μA ,IC=0 6     V
Collector cut-off current ICBO VCB=50V,IE=0     0.1 μA
Collector cut-off current ICEX VCE=35V, VEB=0.4V     0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0     0.1 μA

 

 

 

DC current gain

hFE1 VCE=1V, IC=0.1mA 20      
  hFE2 VCE=1V, IC=1mA 40      
  hFE3 VCE=1V, IC=10mA 80      
  hFE4 VCE=1V, IC=150mA 100   300  
  hFE5 VCE=2V, IC=500mA 40      

 

Collector-emitter saturation voltage

 

VCE(sat)

IC=150mA,IB=15mA     0.4 V
    IC=500mA,IB=50mA     0.75 V

 

Base-emitter saturation voltage

 

VBE(sat)

IC=150mA,IB=15mA     0.95 V
    IC=500mA,IB=50mA     1.2 V
Transition frequency fT VCE=10V, IC=20mA,f =100MHz 250     MHz
Delay time td

VCC=30V, VBE(off)=-2V

IC=150mA , IB1=15mA

    15 ns
Rise time tr       20 ns
Storage time ts

VCC=30V, IC=150mA

IB1=IB2=15mA

    225 ns
Fall time tf       60 ns

 
 
 

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
 
 
 
Typical Characterisitics  
 
 SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA 0

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA 1

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA 2

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA 3

 
 
 
 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ

 
 
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA 4
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA 5
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA 6
 
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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