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2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

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2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA
2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

Large Image :  2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 2SD965A
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

Description
Collector-Base Voltage: 40V Collector Current -Continuous: 5A
Tstg: -55~+150℃ Material: Silicon
Collector Current: 600 MA Storage Temperature: -55~+150℃
High Light:

high frequency transistor

,

power switch transistor

SOT-89-3L Plastic-Encapsulate Transistors 2SD965A 2SD965A

 

 

FEATURE
  • Audio amplifier
  • Flash unit of camera
  • Switching circuit

 

Marking :D965A

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-60V
VCEOCollector-Emitter Voltage-60V
VEBOEmitter-Base Voltage-4V
ICCollector Current-500mA
PCCollector Power Dissipation225mW
RΘJAThermal Resistance From Junction To Ambient556℃/W
TjJunction Temperature150
TstgStorage Temperature-55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=0.1mA, IE=040  V
Collector-emitter breakdown voltageV(BR)CEOIC= 1mA. IB=030  V
Emitter-base breakdown voltageV(BR)EBOIE= 10μA, IC=07  V
Collector cut-off currentICBOVCB= 10V,IE=0  0.1μA
Emitter cut-off currentIEBOVEB=7V, IC=0  0.1μA

 
 

DC current gain

hFE(1)VCE= 2 V, IC=1mA 200  
 hFE’(2)VCE= 2V, IC = 500mA230 800 
 hFE(3)VCE= 2V, IC =2A150   
Collector-emitter saturation voltageVCE(sat)IC=3A, IB=0.1A  1V
Transition frequencyfTVCE=6V, IC=50mA 150 MHz
Out capacitanceCobVCB=20 V , IE=0, f=1MHZ  50pF

 
 
 
 

CLASSIFICATION OF hFE(2)

 

 

RankQRS
Range230-380340-600560-800

 
 
 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.2001.4000.0470.055
E12.2502.5500.0890.100
e0.950 TYP0.037 TYP
e11.8002.0000.0710.079
L0.550 REF0.022 REF
L10.3000.5000.0120.020
θ

 
 
2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA 0
 
 
 
SOT-89-3L Tape and Reel
2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA 1
2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA 2
2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA 3
 
 
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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