SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Name: SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage
Brand: Hua Xuan Yang
SKU: B772
Rating: 4.8 (112 reviews)

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SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Large Image : SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Product Details:

Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS
Model Number:	B772

Payment & Shipping Terms:

Minimum Order Quantity:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day

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SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Description

Power Dissipation:	1.5W	FEATURES:	Low Collector-emitter Saturation Voltage
Collector Dissipation:	1.25W	Usage:	Electronic Components
Collector-Base Voltage:	40V	Case:	Tape/Tray/Reel
High Light:	tip pnp transistor , tip series transistors

SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN)

FEATURE

Low Speed switching

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-30	V
VEBO	Emitter-Base Voltage	-6	V
I_C	Collector Current -Continuous	-3	A
P_C	Collector Dissipation	1.25	W
RӨJA	Thermal Resistance from Junction to Ambient	100	℃/W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

AXIMUM RATINGS(Ta=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	Ic=-100μA, I_E=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=-10mA, I_B=0	-30			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-100 μA,I_C=0	-6			V
Collector cut-off current	ICBO	V_CB=-40 V, I_E=0			-1	μA
Collector cut-off current	ICEO	V_CE=-30 V I_B=0			-10	μA
Emitter cut-off current	IEBO	V_EB=-6V,I_C=0			-1	μA
DC current gain	hFE(1)	V_CE=-2V,I_C=-1A	60		400
	hFE(2)	V_CE=-2V,I_C=-100mA	32
Collector-emitter saturation voltage	VCE(sat)	I_C=-2A,I_B=-0.2A			-0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=-2A,I_B=-0.2A			-1.5	V
Transition frequency	fT	V_CE=-5V,I_C=-0.1A f=10MHz	50			MHz

CLASSIFICATION OF hFE(1)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage 0

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage 1

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage 2

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage 3

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min.	Max.	Min.	Max.
A	——	1.800	——	0.071
A1	0.020	0.100	0.001	0.004
A2	1.500	1.700	0.059	0.067
b	0.660	0.840	0.026	0.033
b1	2.900	3.100	0.114	0.122
c	0.230	0.350	0.009	0.014
D	6.300	6.700	0.248	0.264
E	6.700	7.300	0.264	0.287
E1	3.300	3.700	0.130	0.146
e	2.300(BSC)		0.091(BSC)
L	0.750	——	0.030	——
θ	0°	10°	0°	10°

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage 4

SOT-89-3L Suggested Pad Layout

SOT-89-3L Tape and Reel

Tag:

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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