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A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors
A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

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Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: A733
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

Description
VCBO: -60V VCEO: -50V
VEBO: -5V Product Name: Silicon Semiconductor Triode Type
Tj: 150Š Type: Triode Transistor
High Light:

tip series transistors

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high power pnp transistor

TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP)

 

 

FEATURE
 

Power dissipation

 

 

MARKING

  • A733=Device code
  • Solid dot=Green molding compound device, if none,the normal device
  • Z=Rank of hFE
  • XXX=Code

 

A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
A733 TO-92 Bulk 1000pcs/Bag
A733-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
I C Collector Current -Continuous -100 mA
PC Collector Power Dissipation 250 mW
TJ Junction Temperature 150
Tstg Junction and Storage Temperature -55~+150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60     V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50     V
Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5     V
Collector cut-off current ICBO VCB= -60V, IE=0     -0.1 uA
Emitter cut-off current IEBO VEB= -5 V, IC=0     -0.1 uA
DC current gain hFE VCE= -6V, IC= -1mA 90 200 600  
Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA   -0.18 -0.3 V
Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V
Transition frequency fT VCE=-6V,IC=-10mA 100     MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ     6 pF

 

Noise figure

 

NF

VCE=-6V,IC=-0.3mA,

Rg=10kΩ,f=100HZ

   

 

20

 

dB

 
  

CLASSIFICATION OF hFE(2)

Rank R Q P K
Range 90-180 135-270 200-400 300-600

 

 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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