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TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN
TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

Large Image :  TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: C945
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

Description
VCBO: 60V VCEO: 50V
VEBO: 5V Product Name: Silicon Semiconductor Triode Type
Tj: 150℃ Case: Tape/Tray/Reel
High Light:

tip pnp transistor

,

high power pnp transistor

TO-92 Plastic-Encapsulate Transistors C945  TRANSISTOR (NPN)

 

 

FEATURE
 

Ÿ Excellent hFE linearity

Ÿ Low noise

Ÿ Complementary to A733

 

 

MARKING

C945=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

XXX=Code

 

 

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
C945 TO-92 Bulk 1000pcs/Bag
C945-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
V CEO Collector-Emitter Voltage 50 V
V EBO Emitter-Base Voltage 5 V
I C Collector Current -Continuous 150 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 150
Tstg St orage Temperature -55~+150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60     V
Collector-emitter breakdown voltage V(BR)CEO IC=100μA , IB=0 50     V
Emitter-base breakdown voltage V(BR)EBO IE=100 μA, IC=0 5     V
Collector cut-off current ICBO VCB=60V, IE=0     0.1 μA
Collector cut-off current ICEO VCE=45V, IB=0     0.1 μA
Emitter cut-off current IEBO VEB=5V ,IC=0     0.1 μA

 

DC current gain

hFE(1) VCE=6V , IC=1mA 70   700  
  hFE(2) VCE=6V , IC=0.1mA 40      
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA     0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA     1 V
Transition frequency fT VCE=6V,IC=10mA,f=30MHz 200     MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz     3.0 pF

 

Noise figure

 

NF

VCE=6V,IC=0.1mA

RG=10kΩ,f=1MHz

   

 

10

 

dB

 
  

CLASSIFICATION OF hFE(2)

Rank O Y GR BL
Range 70-140 120-240 200-400 350-700

 

 

 

 

Typical Characteristics

 

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN 1

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN 2

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN 3

TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN 4


 
 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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