|
Product Details:
|
| PC: | 1.25W | Junction Temperature: | 150 ℃ |
|---|---|---|---|
| Storage Temperature: | -55-150℃ | Power Mosfet Transistor: | TO-251-3L Plastic-Encapsulate |
| Material: | Silicon | Type: | Triode Transistor |
| High Light: | tip pnp transistor,high power pnp transistor |
||
TO-251-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)
Power Dissipation
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 40 | V |
| VCEO | Collector-Emitter Voltage | 30 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current -Continuous | 3 | A |
| PC | Collector Power Dissipation | 1.25 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55-150 | ℃ |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC = 100μA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10mA, IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100μA, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 40 V, IE=0 | 1 | µA | ||
| Collector cut-off current | ICEO | VCE= 30 V, IB=0 | 10 | µA | ||
| Emitter cut-off current | IEBO | VEB= 6 V, IC=0 | 1 | µA | ||
| DC current gain | hFE | VCE= 2 V, IC= 1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC= 2A, IB= 0.2 A | 0.5 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC= 2A, IB= 0.2 A | 1.5 | V | ||
|
Transition frequency |
fT |
VCE= 5V, IC=0.1A f =10MHz |
90 |
MHz |
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics
Contact Person: Mr. David Lee
Tel: +86 13417075252
Fax: 86-755-83232335
