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D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency
D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

Large Image :  D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: D882M
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

Description
Collector-Base VoltageCollector-Base Voltage: 40v Collector-Emitter Voltage: 30v
Emitter-Base Voltage: 6V Power Mosfet Transistor: TO-252-2L Plastic-Encapsulate
Type: Semiconductor Triode Type Usage: Electronic Components
High Light:

tip series transistors

,

high power pnp transistor

TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN)

 

 

FEATURE
 


Power Dissipation

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
 

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

 
 
 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40     V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30     V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6     V
Collector cut-off current ICBO VCB= 40 V, IE=0     1 µA
Collector cut-off current ICEO VCE= 30 V, IB=0     10 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0     1 µA
DC current gain hFE VCE= 2 V, IC= 1A 60   400  
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A     0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A     1.5 V

 

Transition frequency

 

fT

VCE= 5V, IC=0.1A

f =10MHz

 

 

90

 

 

MHz

 
  

CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

 

 

 


Typical Characteristics

 

 
 D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency 0D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency 1D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency 2D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency 3
 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min. Max. Min. Max.
A 2.200 2.380 0.087 0.094
A1 0.000 0.100 0.000 0.004
B 0.800 1.400 0.031 0.055
b 0.710 0.810 0.028 0.032
c 0.460 0.560 0.018 0.022
c1 0.460 0.560 0.018 0.022
D 6.500 6.700 0.256 0.264
D1 5.130 5.460 0.202 0.215
E 6.000 6.200 0.236 0.244
e 2.286 TYP. 0.090 TYP.
e1 4.327 4.727 0.170 0.186
M 1.778REF. 0.070REF.
N 0.762REF. 0.018REF.
L 9.800 10.400 0.386 0.409
L1 2.9REF. 0.114REF.
L2 1.400 1.700 0.055 0.067
V 4.830 REF. 0.190 REF.
ĭ 1.100 1.300 0.043 0.0±1

 
 

 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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