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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage
3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Large Image :  3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 3DD13002B
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Description
VCBO: 600V VCEO: 400V
Collector-Base Voltage: 6V Product Name: Semiconductor Triode Type
Power Mosfet Transistor: TO-92 Plastic-Encapsulate Type: Triode Transistor
High Light:

tip series transistors

,

high power pnp transistor

TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN)

 

FEATURE
 

Power Switching Applications

 

 

MARKING

13002B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

 

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage 0

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13002B TO-92 Bulk 1000pcs/Bag
3DD13002B-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.8 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 ~ 150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

 

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage 1

Parameter

Symbol Test conditions Min Typ Max

 

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage 2

Unit

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 600     V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6     V

 

Collector cut-off current

ICBO VCB= 600V,IE=0     100 µA
  ICEO VCE= 400V,IB=0     100 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0     100 µA

 

Dc c urrent gain

hFE1 VCE= 10 V, IC=200mA 9   40  
  hFE2 VCE= 10 V, IC=0.25mA 5      
Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40mA     0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40mA     1.1 V

 

Transition frequency

 

fT

VCE=10V, IC=100mA

f =1MHz

 

5

   

 

MHz

Fall time tf

 

IC=1A, IB1=-IB2=0.2A VCC=100V

    0.5 µs
Storage time ts       2.5 µs

 
  

CLASSIFICATION OF hFE(2)

Range 9-15 15-20 20-25 25-30 30-35 35-40

 

 

 

Typical Characteristics

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage 33DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage 43DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage 53DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage 6

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ   1.600   0.063
h 0.000 0.380 0.000 0.015

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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