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3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

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3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson
3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

Large Image :  3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 3DD13003B
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

Description
Collector-Base Voltage: 700V Collector-Emitter Voltage: 400V
Emitter-Base Voltage: 9V Product Name: Semiconductor Triode Type
Tj: 150℃ Type: Triode Transistor
High Light:

tip series transistors

,

high power pnp transistor

TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)

 

FEATURE
 

Ÿ power switching applications

 

 

MARKING

13003B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson 0

 

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13003B TO-92 Bulk 1000pcs/Bag
3DD13003B-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
V CBO Collector-Base Voltage 700 V
V CEO Collector-Emitter Voltage 400 V
V EBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 ~150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700     V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9     V
Collector cut-off current ICBO VCB= 700V, IE=0     100 µA
Collector cut-off current ICEO VCE= 400V, IB=0     50 µA
Emitter cut-off current IEBO VEB= 7V, IC=0     10 µA
DC current gain hFE VCE= 10V, IC= 0.4 A 20   40  

 

Collector-emitter saturation voltage

VCE(sat)1 IC=1.5A,IB= 0.5A     3 V
  VCE(sat)2 IC=0.5A, IB= 0.1A     0.8 V
Base-emitter saturation voltage VBE(sat) IC=0.5A, IB=0.1A     1 V
Transition Frequency fT VCE=10V,IC=100mA, f =1MHz 4     MHz
Fall time tf IC=1A     0.7 µs
Storage time ts IB1=-IB2=0.2A     4 µs

 
  

CLASSIFICATION OF hFE(2)

Rank        
Range 20-25 25-30 30-35 35-40

 

 

 

Typical Characteristics

3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson 13DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson 23DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson 33DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson 4

 

 

 

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

 

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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