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3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

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3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation
3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

Large Image :  3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 3DD13003
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

Description
VCBO: 700v VCEO: 400V
Emitter-Base Voltage: 9V Product Name: Semiconductor Triode Type
Collector Dissipation: 1.25W Type: Triode Transistor
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tip series transistors

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high power pnp transistor

TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN )

 

FEATURE
 

Power Switching Applications

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Dissipation 1.25 W
TJ, Tstg Junction and Storage Temperature -55~+150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic= 1mA,IE=0 700     V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9     V
Collector cut-off current ICBO VCB= 700V,IE=0     1 mA
Collector cut-off current ICEO VCE= 400V,IB=0     0.5 mA
Emitter cut-off current IEBO VEB= 9 V, IC=0     1 mA

 

DC current gain

hFE(1) VCE= 5 V, IC= 0.5 A 8   40  
  hFE(2) VCE= 5 V, IC= 1.5A 5      
Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA     0.6 V
Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA     1.2 V
Base-emitter voltage VBE IE= 2A     3 V

 

Transition frequency

 

fT

VCE=10V,Ic=100mA

f =1MHz

 

5

   

 

MHz

Fall time tf IC=1A,IB1=-IB2=0.2A VCC=100V     0.5 µs
Storage time ts IC=250mA 2   4 µs

 

 

CLASSIFICATION OF hFE1

Rank              
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40

 

 

CLASSIFICATION OF tS

 

Rank A1 A2 B1 B2
Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs )
         

 


Typical Characteristics

 

 3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation 03DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation 13DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation 2
 

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 1.050 1.350 0.042 0.054
B 1.350 1.650 0.053 0.065
b 0.500 0.700 0.020 0.028
b1 0.700 0.900 0.028 0.035
c 0.430 0.580 0.017 0.023
c1 0.430 0.580 0.017 0.023
D 6.350 6.650 0.250 0.262
D1 5.200 5.400 0.205 0.213
E 5.400 5.700 0.213 0.224
e 2.300 TYP. 0.091 TYP.
e1 4.500 4.700 0.177 0.185
L 7.500 7.900 0.295 0.311

 

 

 

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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