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Product Details:
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| Model Number: | HXY9926A | Product Name: | Mosfet Power Transistor |
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| VDS: | 20v | Case: | Tape/Tray/Reel |
| VGS: | ±1.2v | Continuous Drain Current: | 6.5A |
| High Light: | n channel mosfet transistor,high current mosfet switch |
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HXY9926A 20V Dual N-Channel MOSFET
General Description
The HXY9926A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V
VGS(MAX) rating. This device is suitable for use as a unidirectional
or bi-directional load switch.
Product Summary
Absolute Maximum Ratings T =25°C unless otherwise noted
Electrical Characteristics (T =25°C unless otherwise noted)
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Contact Person: Mr. David Lee
Tel: +86 13417075252
Fax: 86-755-83232335
