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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

Large Image :  10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 10G03S
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

Description
Features: Lead Free Product Is Acquired Product Name: Mosfet Power Transistor
Type: Mosfet Transistor Model Number: 10G03S
Junction Temperature:: 150℃ Application: Power Switching Application
High Light:

n channel mosfet transistor

,

high voltage transistor

10G03S 30V N+P-Channel Enhancement Mode MOSFET

 

 

Description

The 10G03S uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

 

General Features

N-Channel

VDS = 30V,ID =10A

RDS(ON) < 16m Ω@ VGS=10V

P-Channel

VDS = -30V,ID = -9A

RDS(ON) < 37mΩ@ VGS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

 

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

 

 

Package Marking and Ordering Information

 

10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 0

Absolute Maximum Ratings (TC=25℃unless otherwise noted)
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 1
 
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

 

10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 2

 

 

P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
 
 
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 3
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
 
N-Channel Typical Characteristics
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 410G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 510G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 610G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 710G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 810G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 9
 
 
 
 
P-Channel Typical Characteristics
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 1010G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 1110G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 1210G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 1310G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 1410G03S N + P Channel Transistor , Mosfet Power Electronic Transistor 15
 
 

Tag:

high voltage transistor,

n channel mosfet transistor,

high current mosfet switch

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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