HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Name: HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
Brand: Hua Xuan Yang
SKU: HXY4606
Rating: 4.7 (129 reviews)

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HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Large Image : HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Product Details:

Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS
Model Number:	HXY4606

Payment & Shipping Terms:

Minimum Order Quantity:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day

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HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Description

Features:	Surface Mount Package	Product Name:	Mosfet Power Transistor
VDS:	30V	RDS(ON):	< 30m
VDS Model Number:	HXY4606	Case:	Tape/Tray/Reel
High Light:	n channel mosfet transistor , high current mosfet switch

HXY4606 30V Complementary MOSFET

Description

The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 0

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m 1

A. The value of R_θ_JA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P_D is based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT_J=25°C.

D. The R_θ_JA is the sum of the thermal impedence from junction to lead R_θ_JL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS