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WST2078 Mosfet Power Transistor Surface Mount Type High Performance 

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WST2078 Mosfet Power Transistor Surface Mount Type High Performance 

WST2078 Mosfet Power Transistor Surface Mount Type High Performance 
WST2078 Mosfet Power Transistor Surface Mount Type High Performance 

Large Image :  WST2078 Mosfet Power Transistor Surface Mount Type High Performance 

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: WST2078
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

WST2078 Mosfet Power Transistor Surface Mount Type High Performance 

Description
Features: Surface Mount Package Product Name: Mosfet Power Transistor
RDSON: 30mΩ Model Number: WST2078
Case: Tape/Tray/Reel

WST2078 N&P-Channel MOSFET

 

Description

 

The WST2078 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and gate

charge for most of the small power switching and

load switch applications.

 

The WST2078 meet the RoHS and Green Product

requirement with full function reliability approved.

 

 

 

Applications

 

  • High Frequency Point-of-Load Synchronous s
  • Small power switching for MB/NB/UMPC/VGA
  • Networking DC-DC Power System
  • Load Switch

 

Features
  • Advanced high cell density Trench technology
  • z Super Low Gate Charge
  • z Excellent Cdv/dt effect decline
  • z Green Device Available

 

Absolute Maximum Ratings

 

WST2078 Mosfet Power Transistor Surface Mount Type High Performance  0

 

 

Thermal Data
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  1
 
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  2
 
 
Drain-Source Body Diode Characteristics
 
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  3
 
 
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
 
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  4
 
 
Drain-Source Body Diode Characteristics
 
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  5
 
 
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
N-Channel Typical Characteristics
 
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  6
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  7WST2078 Mosfet Power Transistor Surface Mount Type High Performance  8WST2078 Mosfet Power Transistor Surface Mount Type High Performance  9
 
 
P-Channel Typical Characteristics
 
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  10WST2078 Mosfet Power Transistor Surface Mount Type High Performance  11
WST2078 Mosfet Power Transistor Surface Mount Type High Performance  12WST2078 Mosfet Power Transistor Surface Mount Type High Performance  13
 
 
 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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