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WST3078 High Current Transistor , Power Switch Transistor High Cell Density

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WST3078 High Current Transistor , Power Switch Transistor High Cell Density

WST3078 High Current Transistor , Power Switch Transistor High Cell Density
WST3078 High Current Transistor , Power Switch Transistor High Cell Density

Large Image :  WST3078 High Current Transistor , Power Switch Transistor High Cell Density

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: WST3078
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

WST3078 High Current Transistor , Power Switch Transistor High Cell Density

Description
Features: Surface Mount Package Product Name: Mosfet Power Transistor
RDSON: 50mΩ Model Number: WST3078
Case: Tape/Tray/Reel Applications: Load Switch
High Light:

n channel mosfet transistor

,

high voltage transistor

 

 

WST3078 N&P-Ch MOSFET

 

Description

 

The WST3078 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and gate

charge for most of the small power switching and

load switch applications.

 

The WST3078 meet the RoHS and Green Product

requirement with full function reliability approved.

 

 

 

 

Features
  • Advanced high cell density Trench technology
  • z Super Low Gate Charge
  • z Excellent Cdv/dt effect decline
  • z Green Device Available

 

 

Applications

 

  • High Frequency Point-of-Load Synchronous s
  • Small power switching for MB/NB/UMPC/VGA
  • Networking DC-DC Power System
  • Load Switch

 

Absolute Maximum Ratings

 

WST3078 High Current Transistor , Power Switch Transistor High Cell Density 0

 

 

Thermal Data
 
 
WST3078 High Current Transistor , Power Switch Transistor High Cell Density 1
 
 
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
 
WST3078 High Current Transistor , Power Switch Transistor High Cell Density 2
 
 
Drain-Source Body Diode Characteristics
 
WST3078 High Current Transistor , Power Switch Transistor High Cell Density 3
 
 
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WST3078 High Current Transistor , Power Switch Transistor High Cell Density 4
 
 
Drain-Source Body Diode Characteristics
 
WST3078 High Current Transistor , Power Switch Transistor High Cell Density 5
 
 
 
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
N-Channel Typical Characteristics
 
 
WST3078 High Current Transistor , Power Switch Transistor High Cell Density 6WST3078 High Current Transistor , Power Switch Transistor High Cell Density 7WST3078 High Current Transistor , Power Switch Transistor High Cell Density 8
 
 
P-Channel Typical Characteristics
 
WST3078 High Current Transistor , Power Switch Transistor High Cell Density 9WST3078 High Current Transistor , Power Switch Transistor High Cell Density 10WST3078 High Current Transistor , Power Switch Transistor High Cell Density 11
 
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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