WSF3012 N-Ch and P-Channel MOSFET
Description
The WSF3012 is the highest performance trench N-ch
and P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge for
most of the synchronous buck converter applications .
The WSF3012 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full function
reliability approved.
Product Summery
Features
- z Advanced high cell density Trench technology
- z Super Low Gate Charge
- z Excellent CdV/dt effect decline
- z 100% EAS Guaranteed
- z Green Device Available
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
Absolute Maximum Ratings
Thermal Data
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A
4. The power dissipation is limited by 150℃ junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
P-Channel Typical Characteristics
