QM4803D N-Ch and P-Channel MOSFET
Description
The QM4803D is the highest performance trench
N-ch and P-ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gatecharge for most of the synchronous buck
converter applications .
The QM4803D meet the RoHS and Green Product
requirement 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Applications
- z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
- z Networking DC-DC Power System
- z CCFL Back-light Inverter
Product Summery
Absolute Maximum Ratings
Thermal Data
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
P-Channel Typical Characteristics
