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60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

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60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material
60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

Large Image :  60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: HXY4264
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

Description
Product Name: Mosfet Power Transistor Junction Temperature:: 150℃
Material: Silicon Model Number: HXY4264
Case: Tape/Tray/Reel Type: Mosfet Transistor

60V N-Channel AlphaSGT HXY4264
 

 

Product Summary

 

 

VDS 60V
ID (at VGS=10V) 13.5A
RDS(ON) (at VGS=10V) < 9.8mΩ
RDS(ON) (at VGS=4.5V) < 13.5mΩ

 

 

General Description

 

Trench Power AlphaSGTTM technology

Low RDS(ON)

Low Gate Charge

 

 

Applications

 

High efficiency power supply

Secondary synchronus rectifier

 

 

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material 0

 

Electrical Characteristics (T =25°C unless otherwise noted)

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material 1

 

 

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

 

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

 

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60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material 8

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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