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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive
AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Large Image :  AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: HXY4266
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Description
Product Name: Mosfet Power Transistor Application: High Frequency Switching
Material: Silicon Model Number: HXY4266
VDS: 60V ID (at VGS=10V): 11A
High Light:

high current transistor

,

mosfet driver using transistor

60V N-Channel AlphaSGT HXY4266
 

 

Product Summary

 

VDS 60V
ID (at VGS=10V) 11A
RDS(ON) (at VGS=10V) < 13.5mΩ
RDS(ON) (at VGS=4.5V) < 18mΩ

 

 

 

General Description

 

• Low RDS(ON)
• Logic Level Gate Drive
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant

 

 

Applications

 

• High Frequency Switching and Synchronous Rectification

 

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive 0

 

 

Electrical Characteristics (T =25°C unless otherwise noted)

 

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive 1

 

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

 

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

 

 

 

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive 8

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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