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Product Details:
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| Model Number: | HXY4410 | Product Name: | Mosfet Power Transistor |
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| Junction Temperature:: | 150℃ | Material: | Silicon |
| Case: | Tape/Tray/Reel | Type: | Mosfet Transistor |
| High Light: | logic mosfet switch,mosfet driver using transistor |
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Product Summary
VDS (V) = 30V
I = 18A
D
RDS(ON) < 11m Ω (VGS = 10V)
RDS(ON) < 19m Ω (VGS = 4.5V)
General Description
The HXY4410 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion.
Electrical Characteristics (T =25°C unless otherwise noted)
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT =25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Contact Person: Mr. David Lee
Tel: +86 13417075252
Fax: 86-755-83232335
