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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Large Image :  HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: HXY2312
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Description
Product Name: Mosfet Power Transistor Junction Temperature:: 150℃
Material: Silicon Model Number: HXY2312
Case: Tape/Tray/Reel Type: Mosfet Transistor
High Light:

high current transistor

,

logic mosfet switch

 
 
SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET
 

 

Product Summary

 

ID= 6.0 A   VDSS=20v
RDS(on) <32 mΩ VGS =4.5V
RDS(on) <40 mΩ  VGS =2.5V
 
 
FEATURE 
 
TrenchFET Power MOSFET
 
 
APPLICATION
 
 
DC/DC Converters
Load Switching for Portable Applications
 
 
Maximum ratings (Ta=25℃ unless otherwise noted)
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate 0
 
T =25 a ℃ unless otherwise specified
 
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate 1
 
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate 2HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate 3

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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