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MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage

MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage
MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage

Large Image :  MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: MMBD1501A
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
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MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage

Description
Type: SWITCHING DIODESOD FEATURE: Low Leakage
Power Mosfet Transistor: SOT-23 Plastic-Encapsulate Diodes DC Blocking Voltage: 200v
Product ID: MMBD1501A Power Dissipation: 350mW
High Light:

power switch transistor

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power mosfet transistors

MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes


 

FEATURE
 
 Low Leakage
 High Conductance

Marking :A11

MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage 0

 

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage 1

 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

 MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage 2
 


 
 
 
Typical Characterisitics  
 
 
MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage 3MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage 4



 
 
 
 
 
 
 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°

 

Tag:

power mosfet transistors,

power switch transistor,

high frequency transistor

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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