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FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet

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FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet

FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet
FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet

Large Image :  FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: FR301 THRU FR307
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet

Description
Type: SWITCHING DIODESOD FEATURE: Low Reverse Leakage
Terminals: Plated Axial Leads, Solderable Per MIL-STD-750, Weight: 0.04 Ounce, 1.10 Grams
Product ID: FR301 THRU FR307 Case: JEDEC DO-41 Molded Plastic Body
High Light:

enhancement mode mosfet

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dual gate mosfet

FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes


 

FEATURE
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
 
FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet 0
 
 
MECHANICAL DATA
 
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.04 ounce, 1.10 grams
 
 
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

 

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet 1
 
 
 
Note:
1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounte
 
 
RATINGS AND CHARACTERISTIC CURVES 1N4942 THRU 1N4948
 
 
FR301 THRU FR307 Enhancement Mode Mosfet , High Voltage Power Mosfet 2

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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