Home ProductsMosfet Power Transistor

HXY4435 30V P-Channel MOSFET

Certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
Customer Reviews
we cooperation with Hua Xuan Yang is largely due to their professionalism, their keen response to the customization of the products we need, the settlement of all our needs and, above all, They provision of quality services.

—— —— Jason from Canada

Under the recommendation of my friend, we know about Hua Xuan Yang, a senior expert in the semiconductor and electronic components industry, which has enabled us to reduce our precious time and not have to venture try other factories.

—— —— Виктор from Russia

I'm Online Chat Now

HXY4435 30V P-Channel MOSFET

HXY4435 30V P-Channel MOSFET
HXY4435 30V P-Channel MOSFET

Large Image :  HXY4435 30V P-Channel MOSFET

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: HXY4435
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

HXY4435 30V P-Channel MOSFET

Description
Product Name: Mosfet Power Transistor VDS: 30V
Model Number: HXY4435 APPLICATION: High Frequency Circuits
FEATURE: Low Gate Charge VGS: 30V
High Light:

high current mosfet switch

,

high voltage transistor

HXY4435 30V P-Channel MOSFET

 

 

Description

 

 
HXY4435 30V P-Channel MOSFET 0HXY4435 30V P-Channel MOSFET 1HXY4435 30V P-Channel MOSFET 2
 
 
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
 
HXY4435 30V P-Channel MOSFET 3HXY4435 30V P-Channel MOSFET 4
 
HXY4435 30V P-Channel MOSFET 5HXY4435 30V P-Channel MOSFET 6

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

Send your inquiry directly to us (0 / 3000)

Leave a Message

We will call you back soon!