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Product Details:
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| Model Number: | 10N60 | Product Name: | Mosfet Power Transistor |
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| APPLICATION: | Power Management | FEATURE: | Excellent RDS(on) |
| Power Mosfet Transistor: | Enhancement Mode Power MOSFET | ||
| High Light: | n channel mosfet transistor,high voltage transistor |
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10N60 K-MTQ 10A 600VN-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
FEATURES
RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
| Ordering Number | Package | Pin Assignment | Packing | |||
| Lead Free | Halogen Free | 1 | 2 | 3 | ||
| 10N60KL-TF3-T | 10N60KG-TF3-T | TO-220F | G | D | S | Tube |
| 10N60KL-TF1-T | 10N60KG-TF1-T | TO-220F1 | G | D | S | Tube |
| 10N60KL-TF2-T | 10N60KG-TF2-T | TO-220F2 | G | D | S | Tube |
Note: Pin Assignment: G: Gate D: Drain S: Source
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 10 | A | |
| Pulsed Drain Current (Note 2) | IDM | 40 | A | |
| Avalanche Current (Note 2) | IAR | 8.0 | A | |
| Avalanche Energy | Single Pulsed (Note 3) | EAS | 365 | mJ |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | ns | |
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Power Dissipation |
TO-220 |
PD |
156 | W |
| TO-220F1 | 50 | W | ||
| TO-220F2 | 52 | W | ||
| Junction Temperature | TJ | +150 | °C | |
| Storage Temperature | TSTG | -55 ~ +150 | °C | |
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4. Repetitive Rating: Pulse width limited by maximum junction temperature.
5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
| PARAMETER | SYMBOL | RATING | UNIT |
| Junction to Ambient | θJA | 62.5 | °C/W |
| Junction to Case | θJC | 3.2 | °C/W |
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
| OFF CHARACTERISTICS | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250μA | 600 | V | |||
| Drain-Source Leakage Current | IDSS | VDS = 600V, VGS = 0V | 10 | μA | |||
| Gate- Source Leakage Current | Forward | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Reverse | VGS = -30V, VDS = 0V | -100 | nA | ||||
| ON CHARACTERISTICS | |||||||
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250μA | 2.0 | 4.0 | V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 5.0A | 1.0 | Ω | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Input Capacitance | CISS | VDS=25V, VGS=0V, f=1.0 MHz | 1120 | pF | |||
| Output Capacitance | COSS | 120 | pF | ||||
| Reverse Transfer Capacitance | CRSS | 13 | pF | ||||
| SWITCHING CHARACTERISTICS | |||||||
| Total Gate Charge (Note 1) | QG | VDS=50V, ID=1.3A, IG=100μA VGS=10V (Note 1,2) | 28 | nC | |||
| Gate-Source Charge | QGS | 8 | nC | ||||
| Gate-Drain Charge | QGD | 6 | nC | ||||
| Turn-On Delay Time (Note 1) | tD(ON) |
VDD =30V, ID =0.5A, RG =25Ω, VGS=10V (Note 1,2) |
80 | ns | |||
| Turn-On Rise Time | tR | 89 | ns | ||||
| Turn-Off Delay Time | tD(OFF) | 125 | ns | ||||
| Turn-Off Fall Time | tF | 64 | ns | ||||
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | |||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 10 | A | ||||
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Maximum Pulsed Drain-Source Diode Forward Current |
ISM | 40 | A | ||||
| Drain-Source Diode Forward Voltage (Note 1) | VSD | VGS = 0 V, IS = 10 A | 1.4 | V | |||
Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Contact Person: Mr. David Lee
Tel: +86 13417075252
Fax: 86-755-83232335
