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High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

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High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge
High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

Large Image :  High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 12N10
Payment & Shipping Terms:
Minimum Order Quantity: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

Description
Product Name: Mosfet Power Transistor APPLICATION: Power Management
FEATURE: Excellent RDS(on) Power Mosfet Transistor: Enhancement Mode Power MOSFET
Model Number: 12N10
High Light:

n channel mosfet transistor

,

high voltage transistor

HXY12N10 N-Channel Enhancement Mode Power MOSFET

 

DESCRIPTION

The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

 

 

FEATURES

● VDS =100V,ID =12A

RDS(ON) < 130mΩ @ VGS =10V

 

Application

 

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

 

 

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge 0

 

ORDERING INFORMATION

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 12 A
Drain Current-Continuous(TC=100℃) ID (100℃) 6.5 A
Pulsed Drain Current IDM 38.4 A
Maximum Power Dissipation PD 30 W
Derating factor   0.2 W/℃
Single pulse avalanche energy (Note 5) EAS 20 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175

 

 

Note: Pin Assignment: G: Gate D: Drain S: Source

 

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge 1

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge 2

 

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current ID 10 A
Pulsed Drain Current (Note 2) IDM 40 A
Avalanche Current (Note 2) IAR 8.0 A
Avalanche Energy Single Pulsed (Note 3) EAS 365 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns

 

Power Dissipation

TO-220

 

PD

156 W
  TO-220F1   50 W
  TO-220F2   52 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

 

 

ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

 

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V
Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.8 2.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID =8A 98   130 m Ω
Forward Transconductance gFS VDS=25V,ID=6A 3.5 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss

 

VDS=25V,VGS=0V, F=1.0MHz

- 690 - PF
Output Capacitance Coss   - 120 - PF
Reverse Transfer Capacitance Crss   - 90 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on)

 

VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω

- 11 - nS
Turn-on Rise Time tr   - 7.4 - nS
Turn-Off Delay Time td(off)   - 35 - nS
Turn-Off Fall Time tf   - 9.1 - nS
Total Gate Charge Qg

 

VDS=30V,ID=3A, VGS=10V

- 15.5   nC
Gate-Source Charge Qgs   - 3.2 - nC
Gate-Drain Charge Qgd   - 4.7 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=9.6A - - 1.2 V
Diode Forward Current (Note 2) IS   - - 9.6 A
Reverse Recovery Time trr

TJ = 25°C, IF =9.6A

di/dt = 100A/μs(Note3)

- 21   nS
Reverse Recovery Charge Qrr   - 97   nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

 

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge 3High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge 4High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge 5High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge 6

 

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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