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Product Details:
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| Product Name: | Mosfet Power Transistor | APPLICATION: | Power Management |
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| FEATURE: | Excellent RDS(on) | Power Mosfet Transistor: | Enhancement Mode Power MOSFET |
| Model Number: | 13P10D | ||
| High Light: | n channel mosfet transistor,high voltage transistor |
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13P10D -100V Mosfet Power Transistor For Power Management ESD Protested
DESCRIPTION
The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat
e charge. It can be used in a wide variety of applications. It is ESD protested.
FEATURES
VDS =-100V,ID =-13A
RDS(ON) <170m @ VGS=-10V (Typ:145m )
Super high dense cell design Advanced trench process technology Reliable and rugged
High density celldesign for ultra low on-resistance
Application
Power switch DC/DC converters
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| 13P10D | TO-252 | 13P10D YYWW | 2500 |
Thermal Characteristic
| Thermal Resistance,Junction-to-Case (Note 2) | RθJc | 3.13 | ℃/W |
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | -100 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous | ID | -13 | A |
| Drain Current-Continuous(TC=100℃) | ID (100℃) | -9.2 | A |
| Pulsed Drain Current | IDM | -30 | A |
| Maximum Power Dissipation | PD | 40 | W |
| Derating factor | 0.32 | W/℃ | |
| Single pulse avalanche energy (Note 5) | EAS | 110 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ |
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4. Repetitive Rating: Pulse width limited by maximum junction temperature.
5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
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Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Contact Person: David
