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Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

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Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

Large Image :  Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 2N60- TO-220F
Payment & Shipping Terms:
Minimum Order Quantity: negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

Description
Features: Powerful Product Name: Logic Level Transistor
Model Number: 2N60- TO-220F Drain-Source Voltage: 600V
Gate-Source Voltage: ± 30V Type: N Channel Mosfet Switch
High Light:

n channel mosfet transistor

,

high voltage transistor

Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F
 
Logic Level Transistor DESCRIPTION
 
The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
 
Logic Level Transistor FEATURES
 
* RDS(ON) < 7.0 Ω @ VGS = 10 V, ID = 1.0A
* High Switching Speed
 
Logic Level Transistor SYMBOL
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 0
ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

2N60L-TF1-T

2N60G-TF1-T

TO-220F1

G

D

S

Tube

2N60L-TF3-T

2N60G-TF3-T

TO-220F

G

D

S

Tube

2N60L-TM3-T

2N60G-TM3-T

TO-251

G

D

S

Tube


Note: Pin Assignment: G: Gate D: Drain S: Source
 
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 1
MARKING
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 2
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
 

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

± 30

V

Drain Current

Continuous

ID

2

A

Pulsed (Note 2)

IDM

4

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

84

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F/TO-220F1

PD

23

W

TO-251

44

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

  1. Repetitive Rating: Pulse width limited by maximum junction temperature.

  2. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

  3. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA
 

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F/TO-220F1

θJA

62.5

°C/W

TO-251

100

°C/W

Junction to Case

TO-220F/TO-220F1

θJC

5.5

°C/W

TO-251

2.87

°C/W

 
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
 

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID= 250μA

600

 

 

V

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

 

 

1

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=30V, VDS=0V

 

 

100

nA

Reverse

VGS=-30V, VDS=0V

 

 

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

 

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.0A

 

 

7.0

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

 
VGS=0V, VDS=25V, f=1.0 MHz

 

190

 

pF

Output Capacitance

COSS

 

28

 

pF

Reverse Transfer Capacitance

CRSS

 

2

 

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

VDS=200V, VGS=10V, ID=2.0A IG=1mA (Note 1, 2)

 

7

 

nC

Gateource Charge

QGS

 

2.9

 

nC

Gate-Drain Charge

QGD

 

1.9

 

nC

Turn-on Delay Time (Note 1)

tD(ON)

 
VDS=300V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2)

 

4

 

ns

Rise Time

tR

 

16

 

ns

Turn-off Delay Time

tD(OFF)

 

16

 

ns

Fall-Time

tF

 

19

 

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

 

 

 

2

A

Maximum Body-Diode Pulsed Current

ISM

 

 

 

8

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

VGS=0V, IS=2.0A

 

 

1.4

V

Reverse Recovery Time (Note 1)

trr

VGS=0V, IS=2.0A,
dIF/dt=100A/µs (Note1)

 

232

 

ns

Reverse Recovery Charge

Qrr

 

1.1

 

µC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
   Essentially independent of operating temperature.
 
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 3
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 4
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 5
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 6
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F 7
 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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