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Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

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Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management
Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

Large Image :  Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: 1606 D-U-V
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

Description
Product Name: Mos Field Effect Transistor V DSS Drain-Source Voltage: 60 V
V GSS Gate-Source Voltage: ±25 V T J Maximum Junction Temperature: 175 °C
T STG Storage Temperature Range: -55 To 150 °C I S Source Current-Continuous(Body Diode): 66A
High Light:

logic mosfet switch

,

mosfet driver using transistor

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

 

Mos Field Effect Transistor Description

 

The Mos Field Effect Transistor is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n-channel enhancement mode, p-channel enhancement mode, and in the nature of n-channel depletion mode. Here we have explained about the N-channel power MOSFET. The design of power MOSFET was made by using the CMOS technology and also used for development of manufacturing the integrated circuits in the 1970s.

 

Mos Field Effect Transistor Feature

 

V/ A,
R DS(ON) =10.4m(typ.) @ V GS =10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)

 

Mos Field Effect Transistor Applications

 

Power Management for Inverter Systems.

 

Ordering and Marking Information

 

D
U : TO-251-3L D : TO-252-2L
Ordering and Marking Information
G : Lead Free Device
Date Code
Package Code
Assembly Material
YYXXX WW
1606
YYXXXJWW G
1606
YYXXXJWW G
V1.1
1
HUAYI
HUAYI defines
ation finish;which are fully compliant with RoHS. HUAYI lead
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
Termin -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.

 

Absolute Maximum Ratings

 

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management 0

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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