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Product Details:
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| Product Name: | Mos Field Effect Transistor | V DSS Drain-Source Voltage: | 30 V |
|---|---|---|---|
| V GSS Gate-Source Voltage: | ±20 V | T J Maximum Junction Temperature: | 175 °C |
| T STG Storage Temperature Range: | -55 To 150 °C | I S Source Current-Continuous(Body Diode): | 100A |
| High Light: | logic mosfet switch,mosfet driver using transistor |
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Linear Power Mos Field Effect Transistor Vertical Structure 3403D-U-V
Mos Field Effect Transistor Description
Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names.
Mos Field Effect Transistor Feature
30V/100A
R DS(ON) = 2.4mΩ(typ.) @V GS = 10V
R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
Applications
Systems High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ordering and Marking Information
D U V
3403 3403 3403
YYXXXJWW G YYXXXJWW G YYXXXJWW G
Package Code
D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code Assembly Material
YYXXX WW G:Halogen Free
Note: -free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. -free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes, corrections, enhancements, modifications, and improvements to this product and/or to this document at any time without notice.
Absolute Maximum Ratings
Contact Person: David
