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Customized Size Mos Field Effect Transistor With Low ON Resistance

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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Customized Size Mos Field Effect Transistor With Low ON Resistance

Customized Size Mos Field Effect Transistor With Low ON Resistance
Customized Size Mos Field Effect Transistor With Low ON Resistance

Large Image :  Customized Size Mos Field Effect Transistor With Low ON Resistance

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: G023N03LR1D-U-V
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

Customized Size Mos Field Effect Transistor With Low ON Resistance

Description
Product Name: Mosfet Power Transistor V DSS Drain-Source Voltage: 30 V
V GSS Gate-Source Voltage: ±20 V T J Maximum Junction Temperature: -55 To 175 °C
T STG Storage Temperature Range: -55 To 175 °C I S Source Current-Continuous(Body Diode): 110 A
High Light:

logic mosfet switch

,

mosfet driver using transistor

Customized Size Mos Field Effect Transistor With Low ON Resistance

 

Mos Field Effect Transistor Introduction

 

Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and size less metalwork and cooling is required. Also the low ON resistance means that efficiency levels can be maintained at a higher level.

 

Mos Field Effect Transistor Feature

 

30V/110A
R DS(ON) = 2.1mΩ(typ.)@V GS = 10V
R DS(ON) = 2.7mΩ(typ.)@V GS = 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available

 

Mos Field Effect Transistor Applications

 

Switching application

Battery Protection

Power Management for DC/DC

 

Ordering and Marking Information

 

D                                                     U                           V

G023N03                                 G023N03                 G023N03

XYWXXXXXX                     XYWXXXXXX           XYWXXXXXX

 

Package Code
D: TO-252-2L U: TO-251-3L V:TO-251-3S

 

Date Code
XYWXXXXXX

 

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.

 

Absolute Maximum Ratings

 

Customized Size Mos Field Effect Transistor With Low ON Resistance 0

Customized Size Mos Field Effect Transistor With Low ON Resistance 1

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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