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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

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China Shenzhen Hua Xuan Yang Electronics Co.,Ltd certification
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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

Large Image :  N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: G045P03LQ1C2
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

Description
Product Name: N Channel Mos Field Effect Transistor Model Number: G045P03LQ1C2
Power: -30V/-80A R DS(ON) = 3.8 MΩ (typ.): @V GS = -10V
R DS(ON) = 6.2 MΩ (typ.): @V GS = -4.5V Application: Switching
High Light:

n channel mosfet transistor

,

high voltage transistor

N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A

 

N Channel Mos Field Effect Transistor Description

 

-30V/-80A
R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V
R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available

 

N Channel Mos Field Effect Transistor Applications

 

Switching Application
Power Management for DC/DC
Battery Protection

 

Ordering and Marking Information

 

C2
G045P03
XYMXXXXXX

 

Package Code
C2: PPAK5*6-8L
Date Code
XYMXXXXXX

 

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.

 

Absolute Maximum Ratings

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A 0

 

Typical Operating Characteristics

 

 

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A 1

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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