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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Large Image :  Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP3N10BI
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Description
Product Name: N Channel Mosfet Power Model: AP3N10BI
Marking: MA4 Pack: SOT23
VDSDrain-Source Voltage: 100V VGSGate-Sou Rce Voltage: ±20A
High Light:

n channel mosfet transistor

,

high voltage transistor

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

 

N Channel Mosfet Power Working and Characteristics

 

The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the heavily doped layer with a low resistive material and the N- layer is a lightly doped layer with the high resistance region.

 

N Channel Mosfet Power Features

 

 

VDS= 100V I D=2.8 A

 

 

RDS(ON)< 320mΩ @ VGS=10V

 

N Channel Mosfet Power Application

 

Battery protection

Uninterruptible power supply

 

Package Marking and Ordering Information

 

Product ID Pack Marking Qty(PCS)
AP3N10BI SOT23 MA4 3000

 

Absolute Maximum Ratings (TC=25 unless otherwise specified)

 

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Sou rce Voltage ±20 V
ID@TA=25℃ Continuous Drain Current, V GS @ 10V 1 2.8 A
ID@TA=70℃ Continuous Drain Current, V GS @ 10V 1 1 A
IDM Pulsed Drain Current2 5 A
PD@TA=25 ℃ Total Power Dissipation3 1 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
RθJA Thermal Resistance Junction-ambient 1 125 ℃/W
RθJC Thermal Resistance Junction-Case 1 80 ℃/W

 

Electrical Characteristics (TJ=25 , unless otherwise noted)

 

 

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.067 --- V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=1A --- 260 310

 

VGS=4.5V , I D=0.5A --- 270 320
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 1.0 1.5 2.5 V
△VGS(th) VGS(th) Temperature Coefficient   --- -4.2 --- mV/℃
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6  
Qg Total Gate Charge (10V)   --- 9.7 13.6  
Qgs Gate-Source Charge --- 1.6 2.2
Qgd Gate-Drain Charge --- 1.7 2.4
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

--- 1.6 3.2

 

ns

Tr        
Td(off) Turn-Off Delay Time --- 13.6 27
Tf Fall Time --- 19 38
Ciss Input Capacitance   --- 508 711  
Coss Output Capacitance --- 29 41
Crss Reverse Transfer Capacitance --- 16.4 23
IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1.2 A
ISM Pulsed Source Current 2,4 --- --- 5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , --- 14 --- nS
Qrr Reverse Recovery Charge --- 9.3 --- nC
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.067 --- V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V , I D=1A --- 260 310

 

VGS=4.5V , I D=0.5A --- 270 320
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 1.0 1.5 2.5 V
△VGS(th) VGS(th) Temperature Coefficient   --- -4.2 --- mV/℃
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6  
Qg Total Gate Charge (10V)   --- 9.7 13.6  
Qgs Gate-Source Charge --- 1.6 2.2
Qgd Gate-Drain Charge --- 1.7 2.4
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

--- 1.6 3.2

 

ns

Tr        
Td(off) Turn-Off Delay Time --- 13.6 27
Tf Fall Time --- 19 38
Ciss Input Capacitance   --- 508 711  
Coss Output Capacitance --- 29 41
Crss Reverse Transfer Capacitance --- 16.4 23
IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1.2 A
ISM Pulsed Source Current 2,4 --- --- 5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , --- 14 --- nS
Qrr Reverse Recovery Charge --- 9.3 --- nC

 

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%

3.The power dissipation is limited by 150 ℃ junction temperature

 

4 .The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V 0

 

 

Symbol

Dimensions in Millimeters
MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
θ

 

Attention

 

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: Mr. David Lee

Tel: +86 13417075252

Fax: 86-755-83232335

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