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AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

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AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor
AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

Large Image :  AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP6H03S
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

Description
Product Name: Mosfet Driver Using Transistor Model: AP6H03S
Pack: SOP-8 Marking: AP6H03S YYWWWW
VDSDrain-Source Voltage: 30V VGSGate-Sou Rce Voltage: ±20A
High Light:

n channel mosfet transistor

,

high voltage transistor

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

 

Mosfet Driver Using Transistor Description:

 

The AP6H03Suses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a
level shifted high side switch, and for a host of other
applications

 

Mosfet Driver Using Transistor Features

N-Channel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
NChannel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
High power and current handing capability
Lead free product is acquired
Surface mount package

 

Mosfet Driver Using Transistor Application


● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply

 

 

Package Marking and Ordering Information

 

 

Product ID Pack Marking Qty(PCS)
AP6H03S SOP-8 AP6H03S YYWWWW 3000

 

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

 

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Sou rce Voltage ±20 V

 

D

I

Drain Current – Continuous (TC=25℃) 7.5 A
Drain Current – Continuous (TC=100℃) 4.8 A
IDM Drain Current – Pulsed1 30 A
EAS Single Pulse Avalanche Energy 2 14 mJ
IAS Single Pulse Avalanched Current 2 17 A

 

PD

Power Dissipation (TC=25℃) 2.1 W
Power Dissipation – Derate above 25℃ 0.017 W/℃
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Sou rce Voltage ±20 V

 

D

I

Drain Current – Continuous (TC=25℃) 7.5 A
Drain Current – Continuous (TC=100℃) 4.8 A
IDM Drain Current – Pulsed1 30 A
EAS Single Pulse Avalanche Energy 2 14 mJ
IAS Single Pulse Avalanched Current 2 17 A

 

PD

Power Dissipation (TC=25℃) 2.1 W
Power Dissipation – Derate above 25℃ 0.017 W/℃
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

 

Thermal Characteristics

 

Symbol Parameter Typ. Max. Unit
RθJA Thermal Resistance Junction to ambient --- 60 ℃/W

 

Electrical Characteristics (TJ=25 , unless otherwise noted) Off Characteristics

 

 

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△ BVDSS/△ TJ BVDSS Temperature Coefficient Reference to 25℃•, ID=1mA --- 0.04 --- V/℃

 

IDSS

 

Drain-Source Leakage Current

VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△ BVDSS/△ TJ BVDSS Temperature Coefficient Reference to 25℃•, ID=1mA --- 0.04 --- V/℃

 

IDSS

 

Drain-Source Leakage Current

VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA

 

RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=6A --- 15 20
VGS=4.5V , ID=3A --- 23 30
VGS(th) Gate Threshold Voltage VGS=VDS , I =250uA 1.2 1.5 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃
gfs Forward Transconductance VDS=10V , I D=6A --- 13 --- S

 

Qg Total Gate Charge3 , 4   --- 4.1 8  
Qgs Gate-Source Charge 3 , 4 --- 1 2
Qgd Gate-Drain Charge --- 2.1 4
Td(on) Turn-On Delay Time 3 , 4   --- 2.6 5  
Tr Rise Time --- 7.2 14
Td(off) Turn-Off Delay Time 3 , 4 --- 15.8 30
Tf Fall Time 3 , 4 --- 4.6 9
Ciss Input Capacitance   --- 345 500  
Coss Output Capacitance --- 55 80
Crss Reverse Transfer Capacitance --- 32 55
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz --- 3.2 6.4 Ω

 

IS Continuous Source Current

 

VG=VD=0V , Force Current

--- --- 7.5 A
ISM Pulsed Source Current --- --- 30 A
VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V

rr

t

Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs --- --- --- ns
Qrr Reverse Recovery Charge --- --- --- nC
IS Continuous Source Current

 

VG=VD=0V , Force Current

--- --- 7.5 A
ISM Pulsed Source Current --- --- 30 A
VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V

rr

t

Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs --- --- --- ns
Qrr Reverse Recovery Charge --- --- --- nC

 

Reflow Soldering

The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

 

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.

 

Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface

temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness

2.5 mm or with a volume 350 mm so called thick/large packages). The top-surface temperature of the packages should preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm so called thin/small packages).

 

1’st Ram Up Rate max3.0+/-2 /sec -
Preheat 150 ~200 60~180 sec
2’nd Ram Up max3.0+/-2 /sec -
Solder Joint 217 above 60~150 sec
Peak Temp 260 +0/-5 20~40 sec
Ram Down rate 6 /sec max -

Wave Soldering:

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.

 

Manual Soldering:

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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