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AP12N10D Power Switch Transistor , Original Silicon Power Transistor

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AP12N10D Power Switch Transistor , Original Silicon Power Transistor

AP12N10D Power Switch Transistor , Original Silicon Power Transistor
AP12N10D Power Switch Transistor , Original Silicon Power Transistor AP12N10D Power Switch Transistor , Original Silicon Power Transistor AP12N10D Power Switch Transistor , Original Silicon Power Transistor

Large Image :  AP12N10D Power Switch Transistor , Original Silicon Power Transistor

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP12N10D
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

AP12N10D Power Switch Transistor , Original Silicon Power Transistor

Description
Product Name: Power Switch Transistor Model: AP12N10D
Pack: TO-252 Marking: AP12N10D
VDSDrain-Source Voltage: 100V VGSGate-Sou Rce Voltage: ±20A
High Light:

n channel mosfet transistor

,

high voltage transistor

AP12N10D Power Switch Transistor , Original Silicon Power Transistor

 

General Description:

 

The AP12N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

 

General Features

 

VDS = 100V ID = 5A
RDS(ON) < 140mΩ @ VGS=4.5V

 

 

Application

 

Battery protection
Load switch
Uninterruptible power supply

 

Package Marking and Ordering Information

 

Product ID Pack Marking Qty(PCS)
AP12N10D TO-252 AP12N10D 3000

 

Absolute Maximum Ratings at Tj=25℃ unless otherwise noted

 

Parameter Symbol Value Unit
Drain source voltage VDS 100 V
Gate source voltage VGS ±20 V
Continuous drain current , TC=25 ℃ ID 12 A
Pulsed drain current , T =25 ℃ ID, pulse 24 A
Power dissipation , T C=25 ℃

P

D

17 W
Single pulsed avalanche energy 5) EAS 1.2 mJ
Operation and storage temperature Tstg,Tj -55 to 150
Thermal resistance, junction-case RθJC 7.4 ℃/ W
Thermal resistance, junction-ambient4) RθJA 62 ℃/ W

 

Electrical Characteristics at Tj=25 ℃ unless otherwise specified

 

Symbol Parameter Test condition Min. Typ. Max. Unit
BVDSS Drain-source breakdown voltage V =0 V, ID=250 μA 100     V
VGS(th) Gate threshold voltage V =V , ID=250 μA 1.2 1.5 2.5 V
RDS(ON) Drain-source on-state resistance VGS=10 V, ID=5 A   110 140
RDS(ON) Drain-source on-state resistance V =4.5 V, ID=3 A   140 180

 

IGSS

 

Gate-source leakage current

V =20 V     100

 

nA

V =-20 V     -100
IDSS Drain-source leakage current VDS=100 V, VGS=0 V     1 uA
Ciss Input capacitance V =0 V,   206.1   pF
Coss Output capacitance   28.9   pF
Crss Reverse transfer capacitance   1.4   pF
td(on) Turn-on delay time

VGS=10 V,

VDS=50 V,

  14.7   ns
tr Rise time   3.5   ns
td(off) Turn-off delay time   20.9   ns

t

f

Fall time   2.7   ns
Qg Total gate charge     4.3   nC
Qgs Gate-source charge   1.5   nC
Qgd Gate-drain charge   1.1   nC
Vplateau Gate plateau voltage   5.0   V
IS Diode forward current

 

VGS<Vth

    7

 

A

ISP Pulsed source current     21
VSD Diode forward voltage IS=7 A, VGS=0 V     1.0 V

t

rr

Reverse recovery time     32.1   ns
Qrr Reverse recovery charge   39.4   nC
Irrm Peak reverse recovery current   2.1   A
Symbol Parameter Test condition Min. Typ. Max. Unit
BVDSS Drain-source breakdown voltage V =0 V, ID=250 μA 100     V
VGS(th) Gate threshold voltage V =V , ID=250 μA 1.2 1.5 2.5 V
RDS(ON) Drain-source on-state resistance VGS=10 V, ID=5 A   110 140
RDS(ON) Drain-source on-state resistance V =4.5 V, ID=3 A   140 180

 

IGSS

 

Gate-source leakage current

V =20 V     100

 

nA

V =-20 V     -100
IDSS Drain-source leakage current VDS=100 V, VGS=0 V     1 uA
Ciss Input capacitance V =0 V,   206.1   pF
Coss Output capacitance   28.9   pF
Crss Reverse transfer capacitance   1.4   pF
td(on) Turn-on delay time

VGS=10 V,

VDS=50 V,

  14.7   ns
tr Rise time   3.5   ns
td(off) Turn-off delay time   20.9   ns

t

f

Fall time   2.7   ns
Qg Total gate charge ID=5 A,
VDS=50 V,
VGS=10 V
  4.3   nC
Qgs Gate-source charge   1.5   nC
Qgd Gate-drain charge   1.1   nC
Vplateau Gate plateau voltage   5.0   V
IS Diode forward current

 

VGS<Vth

    7

 

A

ISP Pulsed source current     21
VSD Diode forward voltage IS=7 A, VGS=0 V     1.0 V

t

rr

Reverse recovery time IS=5 A, di/dt=100
A/μs
  32.1   ns
Qrr Reverse recovery charge   39.4   nC
Irrm Peak reverse recovery current   2.1   A

 

Attention

 

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

 

Contact Details
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Person: David

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