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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220
AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220 AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220 AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

Large Image :  AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

Product Details:
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
Model Number: AP30N10P
Payment & Shipping Terms:
Minimum Order Quantity: Negotiation
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day

AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

Description
Product Name: Mosfet Power Transistor Model: AP30N10P
Pack: TO-220-3L Marking: AP30P10P XXX YYYY
VDSDrain-Source Voltage: 100V VGSGate-Sou Rce Voltage: ±20V
High Light:

n channel mosfet transistor

,

high voltage transistor

AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

 

Mosfet Power Transistor Description:

 

The AP30N10P uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

 

Mosfet Power Transistor Features

 

VDS = 100V ID = 30 A
RDS(ON) < 40mΩ @ VGS=10V

 

Mosfet Power Transistor Application

 

Battery protection
Load switch
Uninterruptible power supply

 

Package Marking and Ordering Information

 

Product ID Pack Marking Qty(PCS)
AP30P10P TO-220-3L AP30P10P XXX YYYY 1000

 

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Sou rce Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 1 30 A
ID@TC=100 ℃ Continuous Drain Current, V GS @ 10V 1 26 A
IDM Pulsed Drain Current2 72 A
EAS Single Pulse Avalanche Energy 3 126 mJ
IAS Avalanche Current 13 A
PD@TC=25 ℃ Total Power Dissipation4 125 W
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175
RθJA Thermal Resistance Junction-ambient 1 62 ℃/W
RθJC Thermal Resistance Junction-Case 1 1.2 ℃/W

 

Electrical Characteristics (TJ=25, unless otherwise noted)

 

 

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.098 --- V/℃

 

RDS(ON)

 

Static Drain-Source On-Resistance

VGS=10V , I D=16A --- 36 40

 

VGS=4.5V , I D=10A --- --- 50
VGS(th) Gate Threshold Voltage   1.5 --- 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -5.52 --- mV/℃

 

IDSS

 

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25 ℃ --- --- 10

 

uA

VDS=80V , VGS=0V , TJ=55 ℃ --- --- 100
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=16A --- 30 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 ---  
Qg Total Gate Charge (10V)   --- 45.6 ---  
Qgs Gate-Source Charge --- 6.7 ---
Qgd Gate-Drain Charge --- 11.8 ---
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

RG=3.3

ID=10A

--- 12 ---

 

ns

Tr        
Td(off) Turn-Off Delay Time --- 42 ---
Tf Fall Time --- 13.4 ---
Ciss Input Capacitance   --- 2270 ---  
Coss Output Capacitance --- 130 ---
Crss Reverse Transfer Capacitance --- 90 ---
IS Continuous Source Current 1,5 VG=VD=0V , Force Current --- --- 36 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 ℃ --- --- 1.2 V
trr Reverse Recovery Time

IF=16A , dI/dt=100A/µs ,

TJ=25 ℃

--- 33 --- nS
Qrr Reverse Recovery Charge --- 28 --- nC
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.098 --- V/℃

 

RDS(ON)

 

Static Drain-Source On-Resistance

VGS=10V , I D=16A --- 36 40

 

VGS=4.5V , I D=10A --- --- 50
VGS(th) Gate Threshold Voltage   1.5 --- 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -5.52 --- mV/℃

 

IDSS

 

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25 ℃ --- --- 10

 

uA

VDS=80V , VGS=0V , TJ=55 ℃ --- --- 100
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=16A --- 30 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 ---  
Qg Total Gate Charge (10V)   --- 45.6 ---  
Qgs Gate-Source Charge --- 6.7 ---
Qgd Gate-Drain Charge --- 11.8 ---
Td(on) Turn-On Delay Time

 

VDD=50V , VGS=10V ,

RG=3.3

ID=10A

--- 12 ---

 

ns

Tr        
Td(off) Turn-Off Delay Time --- 42 ---
Tf Fall Time --- 13.4 ---
Ciss Input Capacitance   --- 2270 ---  
Coss Output Capacitance --- 130 ---
Crss Reverse Transfer Capacitance --- 90 ---
IS Continuous Source Current 1,5 VG=VD=0V , Force Current --- --- 36 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 ℃ --- --- 1.2 V
trr Reverse Recovery Time

IF=16A , dI/dt=100A/µs ,

TJ=25 ℃

--- 33 --- nS
Qrr Reverse Recovery Charge --- 28 --- nC

 

Attention

 

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

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7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

 

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